Development of a laboratory extreme-ultraviolet lithography tool [electronic resource].

Published: Washington, D.C. : United States. Dept. of Defense, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 11 pages : digital, PDF file
Additional Creators: Sandia National Laboratories, United States. Department of Defense, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

Report Numbers

E 1.99:sand--93-8663c
E 1.99: conf-940271--1
conf-940271--1
sand--93-8663c

Subject(s)

Engineering

Other Subject(s)

Note

Published through SciTech Connect.
04/01/1994.
"sand--93-8663c"
" conf-940271--1"
"DE94008892"
Society of Optical Engineering (SPIE) meeting on microlithography,San Jose, CA (United States),27 Feb - 4 Mar 1994.
White, D.L.; Wood, O.R. II; Freeman, R.R.; Kubiak, G.D.; Sweatt, W.C.; Stulen, R.H.; Chow, W.W.; Nissen, R.P.; Windt, D.L.; Bjorkholm, J.E.; Ray-Chaudhuri, A.K.; Malinowski, M.E.; Haney, S.J.; Wilkerson, G.A.; Paul, P.H.; Tichenor, D.A.; Berger, K.W.; Tennant, D.M.; Fetter, L.A.; Jin, P.S.; MacDowell, A.A.; Jewell, T.E.; Waskiewicz, W.K.; Himel, M.D.; Arling, R.W.; Birtola, S.R.

Funding Information

AC04-76DR00789

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