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The growth of InAsSb/InGaAs strained-layer superlattices by metal-organic chemical vapor deposition [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We have grown InAs{sub l-x}Sbₓ/In{sub 1-y}Ga{sub y}As strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at 475 C, at pressures of 200 to 660 torr and growth rates of 3 − 5 Å/s and layer thicknesses ranging from 55 to 152 Å. Composition of InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS`s were determined by infrared photoluminescence and absorption measurements.
Report Numbers
E 1.99:sand--93-1483c
E 1.99: conf-931108--48
conf-931108--48
sand--93-1483c
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Note
Published through SciTech Connect.
12/31/1993.
"sand--93-1483c"
" conf-931108--48"
"DE94005576"
"GB0103012"
Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993.
Kurtz, S.R.; Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14112598