Observation of stimulated emission from an MBE grown GaN film on sapphire [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 8 pages : digital, PDF file
Additional Creators:: Lawrence Livermore National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

The authors report the first observation of optically pumped stimulated emission from an GaN epilayer at 77K and at room temperature grown by reactive ion-beam molecular beam epitaxy. The observed uv optical emission profile was a nonlinear function of the pump power density, with line narrowing at threshold power densities. The similarity in the emission profile as compared with those of films grown with low-pressure metal-organic chemical vapor deposition and metal-organic vapor phase epitaxy techniques will be noted.

Report Numbers:

E 1.99:ucrl-jc--115682
E 1.99: conf-9311138--1
conf-9311138--1
ucrl-jc--115682

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Note:

Published through SciTech Connect.
11/12/1993.
"ucrl-jc--115682"
" conf-9311138--1"
"DE94003638"
NOVEL laser sources and applications workshop,San Jose, CA (United States),12-13 Nov 1993.
Ross, J.; Rubin, M.; Yee, J.; Newman, N.; Koo, J.; Fu, T.; Yung, K.

Funding Information:

W-7405-ENG-48

View MARC record | catkey: 14112647