Actions for Charge-sensitive poly-silicon TFT amplifiers for a-Si [electronic resource] : H pixel particle detectors

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Charge-sensitive poly-silicon TFT amplifiers for a-Si [electronic resource] : H pixel particle detectors

Published
Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
7 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.
Report Numbers
E 1.99:lbl--32219
E 1.99: conf-920402--41
conf-920402--41
lbl--32219
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Other Subject(s)
Note
Published through SciTech Connect.
04/01/1992.
"lbl--32219"
" conf-920402--41"
"DE92016915"
1992 Material Research Society (MRS) spring meeting,San Francisco, CA (United States),27 Apr - 2 May 1992.
Lewis, A.; Hack, M.; Perez-Mendez, V.; Cho, G.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14113179