Charge-sensitive poly-silicon TFT amplifiers for a-Si [electronic resource] : H pixel particle detectors
- Washington, D.C. : United States. Dept. of Energy, 1992. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 7 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.
- Published through SciTech Connect., 04/01/1992., "lbl--32219", " conf-920402--41", "DE92016915", 1992 Material Research Society (MRS) spring meeting,San Francisco, CA (United States),27 Apr - 2 May 1992., and Lewis, A.; Hack, M.; Perez-Mendez, V.; Cho, G.
- Funding Information:
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