Ion implantation in compound semiconductors for high-performance electronic devices [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: 12 pages : digital, PDF file
Additional Creators: Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

Report Numbers

E 1.99:sand--96-0802c
E 1.99: conf-960502--6
conf-960502--6
sand--96-0802c

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Note

Published through SciTech Connect.
05/01/1996.
"sand--96-0802c"
" conf-960502--6"
"DE96008169"
189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996.
Baca, A.G.; Zolper, J.C.; Klem, J.F.; Sherwin, M.E.

Funding Information

AC04-94AL85000

View MARC record | catkey: 14113187