Infrared sensor for CVD deposition of dielectric films [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- 6 pages : digital, PDF file
- Additional Creators
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Infrared emission (IRE) spectra were obtained from two borophosphosilicate glass (BPSG) thin-film sample sets. The first set consisted of 21 films deposited on undoped silicon wafers, and the second set consisted of 9 films deposited on patterned and doped (product) wafers. The IRE data were empirically modeled using partial least-squares calibration to simultaneously quantify four BPSG thin-film properties. The standard errors of the determinations when modeling the 21 monitor wafers were
- Report Numbers
- E 1.99:sand--94-1262c
E 1.99: conf-940411--21
conf-940411--21
sand--94-1262c - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
06/01/1994.
"sand--94-1262c"
" conf-940411--21"
"DE94012915"
"GB0103012"
Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994.
Zhang, S.; Haaland, D.M.; Franke, J.E.; Niemczyk, T.M. - Funding Information
- AC04-94AL85000
View MARC record | catkey: 14113959