Actions for Surface chemistry of boron-doped SiO{sub 2} CVD [electronic resource] : Enhanced uptake of tetraethyl orthosilicate by hydroxyl groups bonded to boron

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Surface chemistry of boron-doped SiO{sub 2} CVD [electronic resource] : Enhanced uptake of tetraethyl orthosilicate by hydroxyl groups bonded to boron

Published
Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
6 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Insight into how dopants can enhance deposition rates has been obtained by comparing reactivities of tetraethyl orthosilicate (TEOS, Si(OCH₂CH₃)₄) with silanol and boranol groups on SiO₂. This comparison is relevant for boron-doped SiO₂ film growth from TEOS and trimethyl borate (TMB, B(OCH₃)₃) sources since boranols and silanols are expected to be present on surface during the (CVD). A silica substrate having coadsorbed deuterated silanols (SIOD) and boranols (BOD) was reacted with TEOS in a cold-wall reactor in the mTorr pressure regime at 1000K. Reactions were followed with Fourier transform infrared spectroscopy. Use of deuterated hydroxyls allowed consumption of hydroxyls by TEOS chemisorption to be distinguished from concurrent formation of SIOH and BOH that results from TEOS decomposition. It was found that TEOS reacts with BOD at twice the rate observed for SIOD demonstrating that hydroxyl groups bonded to boron increase the rate of TEOS chemisorption. Surface ethoxy groups produced by chemisorption of TEOS decompose at a slower rate in the presence of TMB decomposition products. Possible dependencies on reactor geometries and other deposition conditions may determine which of these two competing effects will control deposition rates. This may explain (in part) why the rate enhancement effect is not always observed in boron-doped SiO₂ CVD processes.
Report Numbers
E 1.99:sand--93-1497c
E 1.99: conf-931108--41
conf-931108--41
sand--93-1497c
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
12/31/1993.
"sand--93-1497c"
" conf-931108--41"
"DE94005428"
"GB0103012"
Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993.
Moffat, H.K.; Bartram, M.E.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14114133