Design and Characterization of Next-Generation Micromirrors Fabricated in a Four-Level, Planarized Surface-Micromachined Polycrystalline Silicon Process [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1997. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 13 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces using Chemical Mechanical Polishing (CMP), unique post-process metallization, and the best active surface area to date. This paper presents the design, fabrication, modeling, and characterization of several variations of Flexure-Beam (FBMD) and Axial-Rotation Micromirror Devices (ARMD). The released devices are first metallized using a standard sputtering technique relying on metallization guards and masks that are fabricated next to the devices. Such guards are shown to enable the sharing of bond pads between numerous arrays of micromirrors in order to maximize the number of on-chip test arrays. The devices are modeled and then empirically characterized using a laser interferometer setup located at the Air Force Institute of Technology (AFIT) at Wright-Patterson AFB in Dayton, Ohio. Unique design considerations for these devices and the process are also discussed.
- Published through SciTech Connect., 12/31/1997., "sand--97-2532c", " conf-971088--", "DE98000384", IEEE innovative systems in silicon `97, Austin, TX (United States), 8-10 Oct 1997., and Barron, C.C.; Comtois, J.H.; Michalicek, M.A.
- Funding Information:
View MARC record | catkey: 14114444