An examination of the 1-MeV equivalent silicon damage methodology [electronic resource].

Published:: Washington, D.C : United States. Dept. of Energy. Office of the Assistant Secretary for Defense Programs, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: Pages: (9 pages) : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Energy. Office of the Assistant Secretary for Defense Programs, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

The assumptions, approximations, and uncertainty in the 1-MeV equivalent silicon damage methodology are reviewed. A new silicon displacement kerma function, based on ENDF/B-VI cross sections, is presented and its shape is experimentally confirmed. The issue of an associated 1-MeV equivalent reference kerma value is discussed. 19 refs., 4 figs.

Report Numbers:

E 1.99:sand-90-0341c
E 1.99: conf-900723--4
conf-900723--4
sand-90-0341c

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Note:

Published through SciTech Connect.
01/01/1990.
"sand-90-0341c"
" conf-900723--4"
"DE90007167"
27. IEEE annual international nuclear and space radiation effects conference, Reno, NV (USA), 16-20 Jul 1990.
Kelly, J.G.; Griffin, P.J.; Luera, T.F.; Lazo, M.S. . Dept. of Chemical and Nucle.

Funding Information:

AC04-76DP00789

View MARC record | catkey: 14115281