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Doped semiconductor material and method for doping same [electronic resource].

Published
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1982.
Physical Description
Pages: 16 : digital, PDF file
Additional Creators
United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A method for doping semiconductor material and the semiconductor produced by the method are described. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.
Report Numbers
E 1.99:patents-us-a342683
patents-us-a342683
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
01/26/1982.
"patents-us-a342683"
"DE83002371"
Yang, C.Y.
Funding Information
AC02-76CH00016
View MARC record | catkey: 14115636