Strained quantum well InGaSb/AlGaSb heterostructures grown by molecular beam epitaxy [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1991.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- Pages: (5 pages) : digital, PDF file
- Additional Creators
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Strained, modulation-doped InGaSb/AlGaSb quantum wells were grown on InP substrates by molecular beam epitaxy and characterized by magneto-transport measurements. Hole transport properties were strongly correlated with growth conditions. Shubnikov-de Haas measurements yielded a hole mass of (0.15{plus minus}0.02) m{sub o}, and hole mobilities as high as 3300 cm₂/Vs were obtained at 77K, with a density of 1.6×10₁₂ cm{sup −2}, thus showing promise for p-type field-effect transistor applications. 9 refs., 4 figs.
- Report Numbers
- E 1.99:sand-91-0995c
E 1.99: conf-9109208--4
conf-9109208--4
sand-91-0995c - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
01/01/1991.
"sand-91-0995c"
" conf-9109208--4"
"DE92000997"
International symposium on gallium arsenide and related compounds, Seattle, WA (United States), 23-26 Sep 1991.
Kurtz, S.R.; Lott, J.A.; Klem, J.F.; Schirber, J.E. - Funding Information
- AC04-76DP00789
View MARC record | catkey: 14116444