Beam lead device temperature testing [electronic resource].
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1976.
- Physical Description:
- Pages: 30 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The ability to perform 100-percent electrical probe testing of beam lead devices (BLD) at temperatures from 0 to 50/sup 0/C was developed. Correlation of probe test results to bonded sample test results from --55 to 100/sup 0/C was established for some parameters on transistors, diodes, and Zener diodes. The tests performed on transistors included collector-to-emitter leakage, collector-to-base leakage, current gain, and collector-emitter saturation voltages. Reverse leakage current tests were performed on diodes and Zener diodes in addition to forward voltage drop on diodes and Zener voltage on Zener diodes. It was determined from these tests that, in nearly all cases, probe testing can be performed at room temperature to assure a limit at temperature extremes once the exact temperature dependence of the parameter is known for a lot of devices. No waxes compatible with either vendor or Bendix Kansas City Division BLD processing are presently available which will allow testing at temperatures above 50/sup 0/C.
- Report Numbers:
- E 1.99:bdx-613-1275
- Other Subject(s):
- Published through SciTech Connect.
Bendix Corp., Kansas City, Mo. (USA)
- Funding Information:
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