High temperature electronics status report, 1974--1975. [GaP and SiC semiconductors for operation at 500/sup 0/C] [electronic resource].
- Livermore, Calif. : Lawrence Livermore Laboratory, 1976.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 80 : digital, PDF file
- Additional Creators:
- Lawrence Livermore Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The objective of the High Temperature Electronics Program is the assembly and/or development of the technologies necessary for the fabrication of measurement and communications electronics operative in a 500/sup 0/C ambient. It is anticipated that the technology will be developed to the level required to demonstrate medium scale integrated circuits. Basic electronic properties, structures, and fabrication technology for gallium phosphide and silicon carbide devices are presented. (TFD)
- Report Numbers:
- E 1.99:ucid-17109
- Other Subject(s):
- Published through SciTech Connect.
- Funding Information:
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