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Crystallization from high temperature solutions of Si in Cu/Al solvent [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1996.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators
Midwest Research Institute (Kansas City, Mo.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
Report Numbers
E 1.99:us 5544616
us 5544616
Other Subject(s)
Note
Published through SciTech Connect.
01/01/1996.
"us 5544616"
"US patent application 08/249,957"
Ciszek, Theodore F.; Wang, Tihu.
Funding Information
AC02-83CH10093
View MARC record | catkey: 14153453