Actions for Lithium-ion drifting [electronic resource] : Application to the study of point defects in floating-zone silicon

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Lithium-ion drifting [electronic resource] : Application to the study of point defects in floating-zone silicon

Published
Washington, D.C. : United States. National Aeronautics and Space Administration, 1997.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
14 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. National Aeronautics and Space Administration, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The use of lithium-ion (Li⁺) drifting to study the properties of point defects in p-type Floating-Zone (FZ) silicon crystals is reported. The Li⁺ drift technique is used to detect the presence of vacancy-related defects (D defects) in certain p-type FZ silicon crystals. SUPREM-IV modeling suggests that the silicon point defect diffusivities are considerably higher than those commonly accepted, but are in reasonable agreement with values recently proposed. These results demonstrate the utility of Li⁺ drifting in the study of silicon point defect properties in p-type FZ crystals. Finally, a straightforward measurement of the Li⁺ compensation depth is shown to yield estimates of the vacancy-related defect concentration in p-type FZ crystals.
Report Numbers
E 1.99:lbnl--39847
E 1.99: conf-970517--7
conf-970517--7
lbnl--39847
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
04/01/1997.
"lbnl--39847"
" conf-970517--7"
"DE97006357"
": Contract NAS5-32626"
"Grant NASA-94-OSS-16"
191. meeting of the Electrochemical Society, Inc., Montreal (Canada), 4-9 May 1997.
Walton, J.T.; Wong, Y.K.; Zulehner, W.
Funding Information
AC03-76SF00098
View MARC record | catkey: 14352807