Properties and characterization of thin film ferroelectric capacitors for nonvolatile memories [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Defense, 1990.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: Pages: (3 pages) : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Defense, United States. Department of Energy. Office of the Assistant Secretary for Defense Programs, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Thin film ferroelectric materials are the basis for a new, promising IC nonvolatile memory technology. The primary material being studied for ferroelectric memories is PZT. One of the key factors in determining the feasibility of PZT ferroelectric memories for weapon or space applications is whether PZT ferroelectric technology can be integrated into a radiation-hardened CMOS or bipolar process. Sandia National Laboratories has a program to study ferroelectric/CMOS process integration issues. The primary goal of this program is to determine if radiation-hardened reliable ferroelectric/CMOS IC memories can be fabricated. This program includes both the fabrication and characterization of ferroelectric test capacitors. In this paper we will give a brief overview of the program, discuss techniques developed to characterize ferroelectric devices for retention and endurance, and give results on studies of fatigue and retention of capacitors.

Report Numbers:

E 1.99:sand-90-2933c
E 1.99: conf-910251--1
conf-910251--1
sand-90-2933c

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Note:

Published through SciTech Connect.
01/01/1990.
"sand-90-2933c"
" conf-910251--1"
"DE91004037"
IEEE nonvolatile semiconductor memory workshop, Monterey, CA (USA), 19-22 Feb 1991.
Miller, S.L.; Rodgers, M.S.; Liang, A.Y.; Tuttle, B.A.; Schwank, J.R.; Nasby, R.D.; Dressendorfer, P.V.

Funding Information:

AC04-76DP00789

View MARC record | catkey: 14360783