KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- vp : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information - Access Online:
- www.osti.gov
- Summary:
- Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.
- Subject(s):
- Note:
- Published through SciTech Connect.
11/29/1999.
"ornl/cp-105629"
Materials Research Society, Boston, MA (US), 11/29/1999--12/03/1999.
Williams, E.K.; Hensley, D.K.; Poker, D.B.; Ila, D.; Muntele, C.I. - Funding Information:
- AC05-96OR22464
View MARC record | catkey: 14391441