Actions for KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor [electronic resource].

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KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
vp : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.
Report Numbers
E 1.99:ornl/cp-105629
ornl/cp-105629
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Note
Published through SciTech Connect.
11/29/1999.
"ornl/cp-105629"
Materials Research Society, Boston, MA (US), 11/29/1999--12/03/1999.
Williams, E.K.; Hensley, D.K.; Poker, D.B.; Ila, D.; Muntele, C.I.
Funding Information
AC05-96OR22464
View MARC record | catkey: 14391441