Study of the chemistry of the (111) GaP planes by atom-probe field-ion microscopy. Report No. 4256 [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1980. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 9 : digital, PDF file
- Additional Creators:
- Cornell University. Materials Science Center, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Atom-probe field-ion microscope (FIM) analyses were performed on specimens of the compound semiconductor GaP. Purposes were to show the step-like field-evaporation behavior - corresponding to each atomic layer of the (111) planes - and to determine the chemistry of each plane of atoms. These types of information are of great potential value for the study of a wide range of physical problems involving compound semiconductors. The studies showed that the chemistry of each (111) plane could indeed be determined and that small deviations from stoichiometry within a given plane were also measurable. The overall stoichiometry of GaP was found to be related to the background gas hydrogen and the number of ions field-evaporated per pulse. The observations were explained in terms of possible field-evaporation mechanisms involving the main background gas in the FIM - hydrogen.
- Published through SciTech Connect., 05/01/1980., "doe/er/03158-88", " conf-800730-1", 27. international field emission symposium, Tokyo, Japan, 7 Jul 1980., and Yamamoto, M.; Nakamura, S.; Seidman, D. N.
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