Photogenerated carrier-induced reactions on uhv semiconductor surfaces [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description: Pages: (27 pages) : digital, PDF file
Additional Creators: Columbia University, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

The objective for this experimental work was to examine the reaction mechanisms, half-collision dynamics, and other optically induced chemical effects, that are operable on a well characterized single-crystal semiconductor surface. Of particular interest were reactions induced by charge transfer from the semiconductor surface including hot carrier and thermalized carrier processes. The primary technique to measure the desorbed fragment translational energies was time-of-flight mass-spectroscopy, used in conjunction with a pulsed tunable laser source. The work was carried out in ultrahigh vacuum, thus other surface spectroscopies such as temperature-programmed desorption, (TPD), (LEED), etc. were used as needed. In the project, the photoreactions of several halogen-containing molecules on GaAs(110) surfaces have been investigated. The studies have made the first observations of several new photochemical processes on uhv prepared surfaces including intermolecular charge transfer; desorption by thermal-carrier-induced reactions (including the measurement of coverage-dependent changes in the translational energies of the desorbed products); interferometric oscillation of photoinduced reactions; and self-quenching of thermal carrier reactions on surfaces.

Report Numbers

E 1.99:doe/er/14104-3
doe/er/14104-3

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Note

Published through SciTech Connect.
05/28/1992.
"doe/er/14104-3"
"DE92015355"
Osgood, R.M. Jr.

Funding Information

FG02-90ER14104

View MARC record | catkey: 14396611