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Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators:
Brookhaven National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.
Report Numbers:
E 1.99:bnl--82184-2009-cp
bnl--82184-2009-cp
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Note:
Published through SciTech Connect.
10/19/2009.
"bnl--82184-2009-cp"
"NN2001000"
IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025.
James, R.B.; Yang, G.; Yao, H.W.; Cui, Y.; Hossain, A.; Bolotnikov,A.E.; Camarda, G.S.
Funding Information:
DE-AC02-98CH10886
View MARC record | catkey: 14398978