Actions for Vertically Integrated Circuits at Fermilab [electronic resource].

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Vertically Integrated Circuits at Fermilab [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
9 pages : digital, PDF file
Additional Creators
Fermi National Accelerator Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The exploration of the vertically integrated circuits, also commonly known as 3D-IC technology, for applications in radiation detection started at Fermilab in 2006. This paper examines the opportunities that vertical integration offers by looking at various 3D designs that have been completed by Fermilab. The emphasis is on opportunities that are presented by through silicon vias (TSV), wafer and circuit thinning and finally fusion bonding techniques to replace conventional bump bonding. Early work by Fermilab has led to an international consortium for the development of 3D-IC circuits for High Energy Physics. The consortium has submitted over 25 different designs for the Fermilab organized MPW run organized for the first time.
Report Numbers
E 1.99:fermilab-conf-09-596-ppd
fermilab-conf-09-596-ppd
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Note
Published through SciTech Connect.
01/01/2009.
"fermilab-conf-09-596-ppd"
Presented at 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS MIC 2009), Orlando, Florida , 25-31 Oct 2009.
Yarema, Raymond; Trimpl, Marcel; Zimmerman, Tom; Demarteau, Marcel; Deptuch, Grzegorz; Shenai, Alpana; Hoff, James; Lipton, Ronald.
Funding Information
AC02-07CH11359
View MARC record | catkey: 14399127