Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description:
- 17 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.
- Report Numbers:
- E 1.99:sand2000-8613c
sand2000-8613c - Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
01/26/1998.
"sand2000-8613c"
Conference on Room Temperature Semi Conductor Detectors for Remote Portable and In-Situ Radiation Measurement Systems, Jerusalem (IL), 01/26/1998--01/29/1998.
R. B. James; T. S. Gilbert; J. C. Lund; J. M. Van Scyoc; H. Yoon; N. R. Hilton; B. A. Brunet. - Funding Information:
- AC04-94AL85000
View MARC record | catkey: 14400074