Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1998.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 17 pages : digital, PDF file
- Additional Creators:
- Sandia National Laboratories
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.
- Published through SciTech Connect.
Conference on Room Temperature Semi Conductor Detectors for Remote Portable and In-Situ Radiation Measurement Systems, Jerusalem (IL), 01/26/1998--01/29/1998.
R. B. James; T. S. Gilbert; J. C. Lund; J. M. Van Scyoc; H. Yoon; N. R. Hilton; B. A. Brunet.
- Funding Information:
View MARC record | catkey: 14400074