Advanced far infrared detectors [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 43 pages : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > λ > 50 μm are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide.
- Published through SciTech Connect.
": Contract W14606"
Conference on infrared physics,Ascona (Switzerland),21-26 Jun 1993.
- Funding Information:
View MARC record | catkey: 14400531