Ionizing radiation effects on silicon test structures [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 1993.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 18 pages : digital, PDF file
- Additional Creators:
- Brookhaven National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- The effects of ⁶°Co gamma irradiation on MOSCAPS and special junction diode detectors have been studied. The capacitors were used to ellicit the charge accumulation and anneal in two types of thermally grown oxides representative of those used in routine detector processing. Ion implanted, oxide passivated junction detectors having 0.25 and 1 cm² areas and perimeter to area ratios of 1 (a square), 2 and 5 were designed and constructed to amplify the ionizing effects expected to largely affect junction edges through changes in fixed oxide charges. Detectors were exposed to over 4 Mrad and showed clear increases in leakage current in proportion to the junction edge length. Annealing schedules were determined to provide a continuous response to incremental irradiations and subsequent room temperature anneals of leakage current. Besides an increase in gate threshold, little effect on the C(V) response was found. PISCES simulation of the edge fields using different fixed oxide charge revealed regions of very high lateral fields near the junction edges for fixed charges in the 2 × 10¹²/cm² range expected from the capacitor studies which could be responsible for the observed leakage currents.
- Published through SciTech Connect.
1. international conference on large scale applications and radiation hardness of semiconductor detectors,Florence (Italy),7-9 Jul 1993.
Kraner, H.W.; Chen, W.; Zhang, Y.; Li, Z.; Fretwurst, E.; Lindstroem, G.; Dou, L.; Beuttenmuller, R.; Kierstead, J.A.
- Funding Information:
View MARC record | catkey: 14400732