Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection [electronic resource].
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1989.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 8 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab.
- Report Numbers:
- E 1.99:lbl-26997
E 1.99: conf-890426-19
- Other Subject(s):
- Published through SciTech Connect.
Spring meeting of the Materials Research Society, San Diego, CA, USA, 24 Apr 1989.
Kaplan, S.N.; Street, R.A.; Perez-Mendez, V.; Qureshi, S.; Cho, G.; Fujieda, I.
- Funding Information:
View MARC record | catkey: 14401898