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The development and characterization of neutron-damaged GaAs x-ray detectors [electronic resource].

Published:
Livermore, Calif : Lawrence Livermore National Laboratory, 1988.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
Pages: 5 : digital, PDF file
Additional Creators:
Lawrence Livermore National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
Photoconductive x-ray detectors are becoming an important x-ray diagnostic as a result of their small size, fast response time, and high sensitivity. We are developing a discrete array of neutron- damaged GaAs detectors to be used in an imaging x-ray spectrometer, and we describe herein the techniques we use to fabricate and characterize them for an upcoming experiment. Using a 225-ps x-ray pulse from a laser-produced plasma, we measured the sensitivity and time response of the detectors to be 7.1 mA/W and on the order of 150 ps FWHM, respectively. The carrier mobility is 741 cm/sup 2//V/center dot/s at a bias of 2 /times/ 10/sup 4/V/cm. 6 figs.
Report Numbers:
E 1.99:ucrl-99555
E 1.99: conf-8809105-7
conf-8809105-7
ucrl-99555
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
09/09/1988.
"ucrl-99555"
" conf-8809105-7"
"DE89000690"
SPIE O-E Lase: international symposium and exhibition on fiber optics, optoelectronics and laser applications, Boston, MA, USA, 6 Sep 1988.
Springer, P.T.
Funding Information:
W-7405-ENG-48
View MARC record | catkey: 14401963