Fast neutron radiation damage effects on high resistivity silicon junction detectors [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 1992.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Physical Description
- Pages: (15 pages) : digital, PDF file
- Additional Creators
- Brookhaven National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- P⁺−n{sup −}−n⁺ silicon radiation detectors made of high resistivity Si material (ρ ≥ 2 kΩ-cm) were irradiated to a neutron fluence of a few times of 10¹³ n/cm². Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of α = 9 × 10{sup −17} A/cm (ΔI = αVΔφ{sub n}), and the C-V characteristics of detectors irradiated to φ{sub n} > 10¹² n/cm² become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation.
- Report Numbers
- E 1.99:bnl-46198-rev.
E 1.99: conf-9109329--2
conf-9109329--2
bnl-46198-rev. - Subject(s)
- Other Subject(s)
- Si Semiconductor Detectors
- Damaging Neutron Fluence
- Capacitance
- Fast Neutrons
- Frequency Dependence
- Leakage Current
- Physical Radiation Effects
- Silicon Diodes
- Silicon Oxides
- Baryons
- Chalcogenides
- Currents
- Electric Currents
- Electrical Properties
- Elementary Particles
- Fermions
- Hadrons
- Measuring Instruments
- Neutron Fluence
- Neutrons
- Nucleons
- Oxides
- Oxygen Compounds
- Physical Properties
- Radiation Detectors
- Radiation Effects
- Semiconductor Detectors
- Semiconductor Devices
- Semiconductor Diodes
- Silicon Compounds
- Note
- Published through SciTech Connect.
01/01/1992.
"bnl-46198-rev."
" conf-9109329--2"
"DE92010131"
3. workshop on radiation-induced and/or process-related electrically active defects in semiconductor-insulator systems, Triangle Park, NC (United States), 10-13 Sep 1991.
Kraner, H.W.; Li, Zheng. - Funding Information
- AC02-76CH00016
View MARC record | catkey: 14401977