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Silicon radiation detectors with oxide charge state compensation [electronic resource].

Published:
Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1986.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
Pages: 8 : digital, PDF file
Additional Creators:
Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
This paper discusses the use of boron implantation on high resistivity P-type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P-type silicon produces an inversion layer which causes high leakage currents on N/sup +/P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N/sup +/P junctions with very low leakage currents and with low surface conductance.
Report Numbers:
E 1.99:lbl-21566
E 1.99: conf-861007-27
conf-861007-27
lbl-21566
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
10/01/1986.
"lbl-21566"
" conf-861007-27"
"DE87007180"
Nuclear science and nuclear power systems symposium, Washington, DC, USA, 29 Oct 1986.
Walton, J.T.; Goulding, F.S.
Funding Information:
AC03-76SF00098
View MARC record | catkey: 14402192