Radiation-hardened bulk Si-gate CMOS microprocessor family [electronic resource].
- Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1979.
- Physical Description:
- Pages: 5 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Scientific and Technical Information
- RCA and Sandia Laboratories jointly developed a radiation-hardened bulk Si-gate CMOS technology which is used to fabricate the CDP-1800 series microprocessor family. Total dose hardness of 1 x 10/sup 6/ rads (Si) and transient upset hardness of 5 x 10/sup 8/ rads (Si)/sec with no latch up at any transient level was achieved. Radiation-hardened parts manufactured to date include the CDP-1802 microprocessor, the CDP-1834 ROM, the CDP-1852 8-bit I/O port, the CDP-1856 N-bit 1 of 8 decoder, and the TCC-244 256 x 4 Static RAM. The paper is divided into three parts. In the first section, the basic fundamentals of the non-hardened C/sup 2/L technology used for the CDP-1800 series microprocessor parts is discussed along with the primary reasons for hardening this technology. The second section discusses the major changes in the fabrication sequence that are required to produce radiation-hardened devices. The final section details the electrical performance characteristics of the hardened devices as well as the effects of radiation on device performance. Also included in this section is a discussion of the TCC-244 256 x 4 Static RAM designed jointly by RCA and Sandia Laboratories for this application.
- Published through SciTech Connect., 01/01/1979., "sand-79-1273c", " conf-790706-6", 1979 IEEE Annual conference on nuclear and space radiation effects, Santa Cruz, CA, USA, 17 Jul 1979., Cohen, S.; Stricker, R.E.; Dingwall, A.G.F.; Adams, J.R.; Slemmer, W.C., RCA Solid State Technology Center, Somerville, NJ (USA), and Sandia Labs., Albuquerque, NM (USA)
- Funding Information:
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