Large-area non-crystalline semiconductor detectors [electronic resource].
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 1983.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- Pages: 4 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory
United States. Department of Energy. Office of Scientific and Technical Information
- The properties of various non-crystalline semiconductors are considered for use as position-sensitive detectors. Amorphous silicon and conducting plastic can be doped to form NP depletion regions similar to those in single crystal silicon, but without the limitation of single-crystal size. Chalcogenide glassy materials such as Te-Se-Ge compounds as well as some metallic oxides such as the Vanadium oxides have switching and memory properties. They could serve as x,y location identifying devices when triggered by amplified pulses from a parallel plate or multistep gas-filled detector stage in order to resolve the multitrack ambiguity for x,y readout schemes.
- Published through SciTech Connect.
DPF workshop on collider detectors: present capabilities and future possibilities, Berkeley, CA, USA, 28 Feb 1983.
Kaplan, S.N.; Perez-Mendez, V.; Wiedenbeck, P.; Mulera, T.
- Funding Information:
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