Atomic layer deposition of quaternary chalcogenides [electronic resource].

Published: Washington, D.C. : United States. Dept. of Energy, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Additional Creators: Argonne National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Report Numbers

E 1.99:8,741,386
8,741,386

Subject(s)

Materials Science

Note

Published through SciTech Connect.
06/03/2014.
"8,741,386"
"13/631,135"
Martinson, Alex B.F.; Elam, Jeffrey W; Thimsen, Elijah J; Riha, Shannon C; Pellin, Michael J.

Funding Information

AC02-06CH11357

View MARC record | catkey: 14442860