Doping Cu{sub 2}O in Electrolyte Solution [electronic resource] : Dopant Incorporation, Atomic Structures and Electrical Properties
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2013.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Additional Creators:
- University of Texas at Austin, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- We have pursued a number of research activities between April 2010 and April 2011: A detailed study on n-type doping in Cu2O by Br; An analysis of natural resource limitations to terawatt-scale solar cells; Attempt to achieve a 1.4-eV direct band gap in Ni sulfides (NiSx); First-principles studies of doping in Cu2O and electronic structures of NiSx.
- Report Numbers:
- E 1.99:final technical report
final technical report - Subject(s):
- Note:
- Published through SciTech Connect.
11/24/2013.
"final technical report"
Zhang, Qiming; Tao, Meng. - Type of Report and Period Covered Note:
- Final; 08/15/2009 - 01/15/2012
- Funding Information:
- SC0002062
View MARC record | catkey: 14443138