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Mask roughness and its implications for LER at the 22- and 16-nm nodes [electronic resource].

Published
Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2010.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
7 : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.
Report Numbers
E 1.99:lbnl-3308e
lbnl-3308e
Other Subject(s)
Note
Published through SciTech Connect.
02/16/2010.
"lbnl-3308e"
SPIE advanced lithography, San Jose, CA, February 21-26, 2010.
Naulleau, Patrick; George, Simi A.; McClinton, Brittany M.
Materials Sciences Division
Funding Information
DE-AC02-05CH11231
View MARC record | catkey: 14443931