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Enabling graphene nanoelectronics [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2011.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
59 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.
Report Numbers
E 1.99:sand2011-6961
sand2011-6961
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Note
Published through SciTech Connect.
09/01/2011.
"sand2011-6961"
Ohta, Taisuke; Pan, Wei; Beechem Iii, Thomas Edwin; Biedermann, Laura Butler; Gutierrez, Carlos; Nolen, C. M.; Howell, Stephen Wayne; McCarty, Kevin F.; Ross, Anthony Joseph, III.
Funding Information
AC04-94AL85000
View MARC record | catkey: 14443992