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Actinic characterization of EUV bump-type phase defects [electronic resource].

Published
Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2011.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
2 : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Despite tremendous progress and learning with EUV lithography, quantitative experimental information about the severity of point-like phase defects remains in short supply. We present a study of measured, EUV aerial images from a series of well-characterized, open-field, bump-type programmed phase defects, created on a substrate before multilayer deposition.
Report Numbers
E 1.99:lbnl-4369e-ext-abs
lbnl-4369e-ext-abs
Other Subject(s)
Note
Published through SciTech Connect.
01/10/2011.
"lbnl-4369e-ext-abs"
The 55th international conference on electron, ion, and photon beam technology and nanofabrication , Las Vegas, NV , May 31-June 3, 2011.
Goldberg, Kenneth A.; Mochi, Iacopo; Liang, Ted.
Materials Sciences Division
Funding Information
DE-AC02-05CH11231
View MARC record | catkey: 14444118