High Rate Deposition of High Quality ZnO [electronic resource] : Al by Filtered Cathodic Arc
- Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2010. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Physical Description:
- 7 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory. Environmental Energy Technologies Division, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.
- Published through SciTech Connect., 11/18/2010., "lbnl-4171e", Fall Meeting of the Materials Research Society (MRS), Boston, MA, November 29-December 3, 2010., Anders, Andre; Mendelsberg, Rueben J.; Lim, S.H.N.; Milliron, D.J., Accelerator&, Fusion Research Division, and Materials Sciences Division
- Funding Information:
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