Sculpting the shape of semiconductor heteroepitaxial islands [electronic resource] : fromdots to rods
- Washington, D.C. : United States. Dept. of Energy, 2006.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Additional Creators:
- United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.
- Published through SciTech Connect.
Physical Review Letters 98 10 ISSN 0031-9007; PRLTAO FT
Robinson, J.T.; Evans,P.G.; Cao, Y.; Liddle, J.A.; Dubon, O.D.; Schmidt, O.G.; Walko, D.A.; Arms, D.A.; Rastelli, A.; Tinberg, D.S.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Funding Information:
View MARC record | catkey: 14444760