Method for producing high carrier concentration p-Type transparent conducting oxides [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Additional Creators:
- National Renewable Energy Laboratory (U.S.)
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
- Published through SciTech Connect.
"US patent application 10/553,245"
Yan, Yanfa; Li, Xiaonan; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.
- Funding Information:
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