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Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100) [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
22 pages : digital, PDF file
Additional Creators
Stanford Linear Accelerator Center, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Correlations among interface properties and chemical bonding characteristics in HfO₂/GeOₓN{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO₂ atomic layer deposition (ALD). Ultra thin (≈1.1 nm), thermally stable and aqueous etch-resistant GeOₓN{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge₃N₄ were synthesized. To evaluate GeOₓN{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} (≈ 1 x 10¹² cm⁻² eV⁻¹) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples (≈ 1x 10¹³ cm⁻² eV⁻¹). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO₂ film surface and apparent modification of chemical bonding at the GeOₓN{sub y}/Ge interface, which is related to the reduced D{sub it}.
Report Numbers
E 1.99:slac-pub-13449
slac-pub-13449
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
10/31/2008.
"slac-pub-13449"
Journal of Electrochemical Society FT
Sun, Yun; McIntyre, Paul C.; Pianetta, Piero; Saraswat, Krishna C.; Oshima, Yasuhiro; Sugawara, Takuya; Kuzum, Duygu.
Funding Information
AC02-76SF00515
View MARC record | catkey: 14445232