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Mask inspection microscopy with 13.2 nm table-top laser illumination [electronic resource].

Published
Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
13 : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We report the demonstration of a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55 ± 3 nm. The microscope uses illumination from a table-top EUV laser to acquire aerial images of photolithography masks with a 20 second exposure time. The modulation transfer function of the optical system was characterized.
Report Numbers
E 1.99:lbnl-1111e
lbnl-1111e
Other Subject(s)
Note
Published through SciTech Connect.
10/14/2008.
"lbnl-1111e"
Optics Letters ISSN 0146-9592; OPLEDP FT
Goldberg, Kenneth A.; Naulleau, Patrick; Wang, Yong; Attwood, David T.; Anderson, Erik H.; Chao, Weilun; Liu, Yanwei; Rocca, Jorge J.; Marconi, Mario C.; Menoni, Carmen S.; Brewer, Courtney A.; Brizuela, Fernando; Wachulak, Przemyslaw; Pedaci, Francesco.
Materials Sciences Division
Funding Information
DE-AC02-05CH11231
View MARC record | catkey: 14445249