Influence of base and PAG on deprotection blur in EUV photoresists and some thoughts on shot noise [electronic resource].

Published:: Berkeley, Calif. : Lawrence Berkeley National Laboratory, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:: 7 : digital, PDF file
Additional Creators:: Lawrence Berkeley National Laboratory and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

A contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist (EH27) as the weight percent of base and photo acid generator (PAG) were varied. Patterning ability in 1:1 line-space patterns is shown to improve at smaller pitches as base/PAG are increased however no significant change in deprotection blur was observed. Isolated (or intrinsic) line-edge-roughness (LER) is shown to improve with increased base loading while remaining fixed through PAG loading. A discussion of improved patterning performance as related to shot noise and deprotection blur concludes with a speculation that the spatial distribution of PAG molecules has been playing some role, perhaps a dominant one, in determining the uniformity of photo generated acids in the resists that have been studied.

Report Numbers:

E 1.99:lbnl-645e
lbnl-645e

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Note:

Published through SciTech Connect.
06/01/2008.
"lbnl-645e"
2008 Internation coference on electron, ion, and photon beam technology and nanofabrication, Portland, OR, May 27-30, 2008.
Naulleau, Patrick; Brainard, Robert; Gallatin, Gregg; Dean, Kim; Anderson, Christopher; Jones, Juanita; Niakoula, Demitra; Hassanein, Elsayed.
Materials Sciences Division

Funding Information:

DE-AC02-05CH11231

View MARC record | catkey: 14445364