TEM studies of laterally overgrown GaN layers grown on non-polarsubstrates [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 2006.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy. - Additional Creators
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Transmission electron microscopy (TEM) was used to study pendeo-epitaxial GaN layers grown on polar and non-polar 4H SiC substrates. The structural quality of the overgrown layers was evaluated using a number of TEM methods. Growth of pendeo-epitaxial layers on polar substrates leads to better structural quality of the overgrown areas, however edge-on dislocations are found at the meeting fronts of two wings. Some misorientation between the 'seed' area and wing area was detected by Convergent Beam Electron Diffraction. Growth of pendeo-epitaxial layers on non-polar substrates is more difficult. Two wings on the opposite site of the seed area grow in two different polar directions with different growth rates. Most dislocations in a wing grown with Ga polarity are 10 times wider than wings grown with N-polarity making coalescence of these layers difficult. Most dislocations in a wing grown with Ga polarity bend in a direction parallel to the substrate, but some of them also propagate to the sample surface. Stacking faults formed on the c-plane and prismatic plane occasionally were found. Some misorientation between the wings and seed was detected using Large Angle Convergent Beam Diffraction.
- Report Numbers
- E 1.99:lbnl--60794
lbnl--60794 - Other Subject(s)
- Note
- Published through SciTech Connect.
01/05/2006.
"lbnl--60794"
": 400403109"
Photonic West SPIE-The International Society forOptical Engineering, San Jose, CA, 1/22-1-16/06.
Morkoc, H.; Liliental-Weber, Z.; Ni, X.
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
AFOSR ISSA 06NE001 - Funding Information
- DE-AC02-05CH11231
M70022
View MARC record | catkey: 14446349