Actions for Temperature dependence of the fundamental bandgap of InN [electronic resource].

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Temperature dependence of the fundamental bandgap of InN [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2003.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
vp : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, United States. Office of Naval Research, National Science Foundation (U.S.), and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
No abstract prepared.
Report Numbers
E 1.99:lbnl--52113
lbnl--52113
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
01/30/2003.
"lbnl--52113"
Journal of Applied Physics 94 7 ISSN 0021-8979; JAPIAU FT
Wu, J.; Yu, K.M.; Haller, E.E.; Schaff, William J.; Ager III, J.W.; Walukiewicz, W.; Shan, W.; Li, S.X.; Lu, Hai.
Funding Information
AC03-76SF00098
513360
View MARC record | catkey: 14446416