Comparison of Dominant Electron Trap Levels in n-Type and p-Type GaAsN Using Deep-Level Transient Spectroscopy [electronic resource].
Published
Washington, D.C. : United States. Dept. of Energy, 2005. Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Higher-efficiency solar cells improve the likelihood that concentrator photovoltaic systems will become cost effective. A four-junction GaAs- and Ge-based solar cell incorporating a 1-eV bandgap material has an ideal AM0 efficiency of ~40% and could also be used in a terrestrial concentrator module. The dilute-N GaAsN alloy's bandgap can be reduced to near 1 eV when the nitrogen content is 2% - 3%. Indium can also be added to the alloy to improve lattice matching to GaAs and Ge. We have used deep-level transient spectroscopy (DLTS) to characterize traps in both p-type and n-type GaAsN. For each type of material, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.35 eV for p-type GaAsN and about 0.45 eV for n-type GaAsN. In both types of materials, the trap concentrations, modified by ..lambda..-effect factors, increase with both increasing N content and increased doping.