Actions for Rapid Thermal Annealing of HWCVD a-Si [electronic resource] : H Films The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth

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Rapid Thermal Annealing of HWCVD a-Si [electronic resource] : H Films The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth

Published
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We report the effect of the hydrogen (H) content (CH) on the crystallization kinetics, surface morphology and grain growth for Hot Wire CVD a-Si:H films containing 12.5 and 2.7 at.% H which are crystallized by rapid thermal anneal (RTA). For the high CH film we observe explosive H evolution, with a resultant destruction of the film for RTA temperatures >750 deg C. At RTA temperatures ~600 deg C, both films remain intact with similar morphologies. At this same lower RTA, the incubation and crystallization times decrease, and the grain size as measured by X-Ray Diffraction increases with decreasing film CH. SIMS measurements indicate that a similar film CH (<0.5 at.%) exists in both films when crystallization commences. The benefits of a two-step annealing process for the high CH film are documented.
Report Numbers
E 1.99:nrel/cp-520-38953
nrel/cp-520-38953
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Note
Published through SciTech Connect.
11/01/2005.
"nrel/cp-520-38953"
Ginley, D. S.; Reedy, R. C. Jr.; Mahan, A. H.; Readey, D. W.; Roy, B.
Funding Information
AC36-99-GO10337
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