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Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2001.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
vp : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
No abstract prepared.
Report Numbers
E 1.99:lbnl--48965
lbnl--48965
Subject(s)
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Note
Published through SciTech Connect.
09/26/2001.
"lbnl--48965"
Applied Physics Letter 79 16 FT
Baranowski, J.M.; Jasinski, J.; Bozek, R.; Szepielow, A.; Babinski, Adam.
Funding Information
AC03-76SF00098
513340
View MARC record | catkey: 14446924