Auger and Radiative Recombination Coefficients in 0.55 eV InGaAsSb [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2004.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
- Additional Creators:
- Knolls Atomic Power Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- A radio-frequency (RF) photoreflectance technique, which senses changes in sample conductivity as carriers recombine following excitation by a laser pulse, has been used to measure the recombination parameters in 0.55 eV InGaAsSb lattice matched to GaSb. Doubly-capped lifetime structures with variable active layer thicknesses are used to extract the surface recombination velocity (SRV), while analysis of the samples with different doping concentrations is used to obtain Auger (C) and radiative (B) recombination parameters. Parameter extraction for the samples evaluated gives C = 1 ± 0.4 x 10⁻²⁸ cm⁶/s and B = 3 ± 1.5 x 10⁻¹¹ cm³/s for 0.55 eV InGaAsSb lattice matched to GaSb. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples show very good agreement with values obtained from low-level injection conditions.
- Published through SciTech Connect.
G Nichols; CA Wang.
- Funding Information:
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