Email RIS file
Bookmark
Report an Issue

SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description:
5 pages : digital, PDF file
Additional Creators:
National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online

Availability

I Want It
I Want It

Finding items...

Restrictions on Access:
Free-to-read Unrestricted online access
Summary:
Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process
Report Numbers:
E 1.99:nrel/cp-520-38974
nrel/cp-520-38974
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
11/01/2005.
"nrel/cp-520-38974"
Young, D.; Branz, H. M.; Wang, Q.; Reedy, R. C.
Funding Information:
AC36-99-GO10337
View MARC record | catkey: 14447129