Actions for Dislocation Generation by Thermal Stresses in Si [electronic resource] : Modeling and Experiments

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Dislocation Generation by Thermal Stresses in Si [electronic resource] : Modeling and Experiments

Published
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
5 pages : digital, PDF file
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
We developed a finite-element modeling program to predict the thermally generated dislocation distribution in a wafer. This model uses measured parameters that are determined from generating dislocations under a known optical flux.
Report Numbers
E 1.99:nrel/cp-520-38958
nrel/cp-520-38958
Subject(s)
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Note
Published through SciTech Connect.
11/01/2005.
"nrel/cp-520-38958"
Sopori, B.; Sheldon, P.; Balzar, D.; Rupnowski, P.
Funding Information
AC36-99-GO10337
View MARC record | catkey: 14447142