Actions for EUVL mask substrate specifications (wafer-type) [electronic resource].

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EUVL mask substrate specifications (wafer-type) [electronic resource].

Published
Washington, D.C : United States. Dept. of Energy. Office of the Assistant Secretary for Defense Programs, 1999.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy.
Physical Description
250 Kilobytes pages : digital, PDF file
Additional Creators
Lawrence Livermore National Laboratory, United States. Department of Energy. Office of the Assistant Secretary for Defense Programs, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The Extreme Ultraviolet Lithography (EUVL) program currently is constructing an alpha-class exposure tool known as the Engineering Test Stand (ETS) that will employ 200mm wafer format masks. This report lists and explains the current specifications for the EUVL mask substrates suitable for use on the ETS. The shape and size of the mask are the same as those of a standard 200mm Si wafer. The flatness requirements are driven by the potential image placement distortion caused by the non-telecentric illumination of EUVL. The defect requirements are driven by the printable-defect size and desired yield for mask blank fabrication. Surface roughness can cause both a loss of light throughput and image speckle. The EUVL mask substrate must be made of low-thermal-expansion material because 40% of the light is absorbed by the multilayers and causes some uncorrectable thermal distortion during printing.
Report Numbers
E 1.99:ucrl-id-135579
ucrl-id-135579
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
07/01/1999.
"ucrl-id-135579"
Tong, W.
Type of Report and Period Covered Note
Topical;
Funding Information
W-7405-ENG-48
View MARC record | catkey: 14447773